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Epitaxial thin films of YBa2Cu3O7−xon LaAlO3substrates deposited by plasma‐enhanced metalorganic chemical vapor deposition

 

作者: C. S. Chern,   J. Zhao,   Y. Q. Li,   P. Norris,   B. Kear,   B. Gallois,   Z. Kalman,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 2  

页码: 185-187

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104973

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High quality epitaxial YBa2Cu3O7−x(YBCO) superconducting thin films (0.3 &mgr;m thick) were grown on the closely lattice and thermal expansion matched substrate, LaAlO3, which has low dielectric loss. The YBCO layers were prepared,insitu, by a microwave plasma‐enhanced metalorganic chemical vapor deposition process. The films, which had mirror‐like smooth surfaces, were deposited at a substrate temperature of 730 °C with a partial pressure of 2 Torr of N2O. The electrical resistance and magnetic susceptibility versus temperature of the as‐deposited films show metallic behavior in the normal state and sharp superconducting transitions withTc(R=0) of 88 K. Critical current densities measured on patterned bridges were 5×105A/cm2at 78 K for the films deposited on LaAlO3. X‐ray diffraction measurements indicate that films grow epitaxially in the plane of the substrate with axis perpendicular to the substrate surface.

 

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