Epitaxial thin films of YBa2Cu3O7−xon LaAlO3substrates deposited by plasma‐enhanced metalorganic chemical vapor deposition
作者:
C. S. Chern,
J. Zhao,
Y. Q. Li,
P. Norris,
B. Kear,
B. Gallois,
Z. Kalman,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 2
页码: 185-187
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104973
出版商: AIP
数据来源: AIP
摘要:
High quality epitaxial YBa2Cu3O7−x(YBCO) superconducting thin films (0.3 &mgr;m thick) were grown on the closely lattice and thermal expansion matched substrate, LaAlO3, which has low dielectric loss. The YBCO layers were prepared,insitu, by a microwave plasma‐enhanced metalorganic chemical vapor deposition process. The films, which had mirror‐like smooth surfaces, were deposited at a substrate temperature of 730 °C with a partial pressure of 2 Torr of N2O. The electrical resistance and magnetic susceptibility versus temperature of the as‐deposited films show metallic behavior in the normal state and sharp superconducting transitions withTc(R=0) of 88 K. Critical current densities measured on patterned bridges were 5×105A/cm2at 78 K for the films deposited on LaAlO3. X‐ray diffraction measurements indicate that films grow epitaxially in the plane of the substrate with axis perpendicular to the substrate surface.
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