The reaction between SiC and SiO2has been studied in the temperature range 1400–1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high‐temperature mass spectrometer was used for this study. Two systems were studied—1:1 SiC (2 wt% excess carbon) and SiO2; and 1:1:1 SiC, carbon, and SiO2. In both cases the excess carbon forms additional SiC within the Knudsen cell and adjusts to the direct reaction of stoichiometric SiC and SiO2to form SiO(g) and CO(g) in approximately a 3:1 ratio. These results are interpreted in terms of the SiC‐O stability