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Fluorine‐induced suppression of disorder effects of carbon in the hydrogenated amorphous silicon‐carbon alloy thin films

 

作者: D. M. Bhusari,   A. S. Kumbhar,   S. T. Kshirsagar,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 77, issue 1  

页码: 54-61

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359354

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report here the Raman scattering studies of modifications in the structural disorder due to fluorine incorporation in the hydrogenated amorphous silicon‐carbon (a‐Si1−xCx:H) alloys. The structural disorder in the unfluorinateda‐Si1−xCx:H alloys has been observed to increase continuously with the increasing carbon content, whereas the incorporation of fluorine appears to substantially suppress disordering effects of carbon, irrespective of its concentration in the alloy. Additional support for this suppression of disorder is sought from the enhancement of optical band gap after fluorine incorporation in these alloys. The fluorine‐induced suppression of disorder is attributed to the increase in the fraction ofsp3bonded carbon in the fluorinated alloys compared to that of the unfluorinated alloys. The fluorine as well as hydrogen appear to have a preferential attachment with the carbon atoms that tend to form higher hydride and fluoride species which in turn constrain the carbon atoms to formsp3hybridized C‐C or Si‐C bonding in the alloys. ©1995 American Institute of Physics.

 

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