Growth of polycrystalline silicon on glass by selective laser‐induced nucleation
作者:
D. Toet,
B. Koopmans,
P. V. Santos,
R. B. Bergmann,
B. Richards,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 24
页码: 3719-3721
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117200
出版商: AIP
数据来源: AIP
摘要:
Polycrystalline silicon on glass substrates was grown by a method based on the creation of nucleation sites using laser crystallization of amorphous silicon followed by thermal annealing at temperatures below 600 °C. Annealing induces the crystallization of the material around the seeds, eventually leading to coalescence of adjacent domains before spontaneous nucleation sets in. Micro‐Raman spectroscopy shows that the seeds experience a tensile stress, which causes a radial birefringence in the surrounding amorphous silicon, detected by optical anisotropy measurements. We conjecture that this stress facilitates the crystallization of the material around the seed upon thermal annealing. ©1996 American Institute of Physics.
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