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Reactive‐ion etching of WSixin CF4+O2and the associated damage in GaAs

 

作者: Yi‐Jen Chan,   Chao‐Shin Su,   Kuo‐Tung Sung,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 4  

页码: 2550-2554

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588767

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;TUNGSTEN SILICIDES;ETCHING;HIGH−FREQUENCY DISCHARGES;CHEMICAL REACTIONS;CARBON TETRAFLUORIDE;OXYGEN;ANNEALING;MORPHOLOGY;TEMPERATURE DEPENDENCE;FIELD EFFECT TRANSISTORS;WSix;GaAs

 

数据来源: AIP

 

摘要:

Assessments of WSixreactive‐ion etching in terms of the different CF4to O2flow rate ratio were characterized. Based upon the evaluations from etching rates, side‐wall profiles, surface roughness, and damages, we observed that the optimum etching condition was at a ratio of 10:1. The recovery of reactive‐ion‐etching‐treated GaAs damaged layers through the thermal treatment was also investigated as a function of the annealing temperatures and duration times. These parameter evaluations were for the purpose of achieving a high performance GaAs metal–semiconductor field‐effect transistor.

 

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