A non-vacuum process for formingCuInSe2
作者:
C. Fredric,
C. Eberspacher,
K. Pauls,
J. Serra,
J. Zhu,
期刊:
AIP Conference Proceedings
(AIP Available online 1999)
卷期:
Volume 462,
issue 1
页码: 158-163
ISSN:0094-243X
年代: 1999
DOI:10.1063/1.57964
出版商: AIP
数据来源: AIP
摘要:
A new technique for fabricating thin films ofCuInSe2and its alloys for low-cost photovoltaics has been developed. The technique uses simple, self-limiting, non-vacuum processes to prepare particulate precursor materials, to deposit layers of these precursor materials, and to convert the precursor layers intoCuInSe2films. An NREL confirmed 8.5&percent; efficient solar cell has been achieved withCuIn1−xGaxSe2in early research. The simplicity and low cost of the technique are well suited to manufacturing in a wide variety of settings, including in developing countries where industrial infrastructure is currently limited. ©1999 American Institute of Physics.
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