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A non-vacuum process for formingCuInSe2

 

作者: C. Fredric,   C. Eberspacher,   K. Pauls,   J. Serra,   J. Zhu,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1999)
卷期: Volume 462, issue 1  

页码: 158-163

 

ISSN:0094-243X

 

年代: 1999

 

DOI:10.1063/1.57964

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new technique for fabricating thin films ofCuInSe2and its alloys for low-cost photovoltaics has been developed. The technique uses simple, self-limiting, non-vacuum processes to prepare particulate precursor materials, to deposit layers of these precursor materials, and to convert the precursor layers intoCuInSe2films. An NREL confirmed 8.5&percent; efficient solar cell has been achieved withCuIn1−xGaxSe2in early research. The simplicity and low cost of the technique are well suited to manufacturing in a wide variety of settings, including in developing countries where industrial infrastructure is currently limited. ©1999 American Institute of Physics.

 

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