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Quarter‐micron lithography with a wet‐silylated and dry‐developed commercial photoresist

 

作者: Evangelos Gogolides,   Dimitrios Tzevelekis,   Elizabeth Tsoi,   Michael Hatzakis,   Anne‐Marie Goethals,   Ki‐Ho Baik,   Freida Van Roey,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 6  

页码: 3914-3918

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587574

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;VISIBLE RADIATION;ULTRAVIOLET RADIATION;IMAGE FORMING;COMPARATIVE EVALUATIONS;PHOTORESISTS;ETCHING;TEMPERATURE EFFECTS;SPATIAL RESOLUTION

 

数据来源: AIP

 

摘要:

A positive‐tone surface imaging process using wet silylation of the commercial photoresist AZ 5214ETMis presented; it is seen as a practical method to extend optical lithography down to 0.25 μm and to increase significantly the resolution limits of available steppers, without adding appreciable process complexity and cost. A comparative study is done usingH‐line,I‐line, and deep ultraviolet at 248 nm lithography on different steppers. The resolution achieved corresponds to akfactor of 0.4 [i.e., 0.4λ/(numerical aperture)]. The importance of the dry‐development step and the thermal effects associated with the heating of the wafer during etching are discussed.  

 

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