Thermodynamic Calculations on the Chemical Vapor Deposition of Silicon Nitride and Silicon from Silane and Chlorinated Silanes
作者:
Frank Einar Kruis,
Brian Scarlett,
Robert A. Bauer,
Joop Schoonman,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 3
页码: 619-628
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb07851.x
出版商: Blackwell Publishing Ltd
关键词: thermodynamics;silicon nitride;chemical vapor deposition;phase diagrams;silanes
数据来源: WILEY
摘要:
After a discussion of the thermochemical values of the Si–H–Cl–N system which occur in the literature, CVD phase diagrams are presented which include contours of constant deposition efficiency. The temperature range considered is from 800 to 2600 K. A number of chlorinated silanes as well as silane can be used as a silicon source, while ammonia is used as the nitrogen source. The effects of pressure variation and dilution by nitrogen and hydrogen are also included. Some initial calculations concerning silicon diimide are made. The CVD phase diagrams are used to describe several mechanisms occurring during the formation of silicon nitride from the gas
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