Annealing effects on electron drift mobility in hydrogenated amorphous silicon
作者:
Jong‐Hwan Yoon,
Choochon Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 10
页码: 4808-4810
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335347
出版商: AIP
数据来源: AIP
摘要:
Annealing effects on electron drift mobility are investigated using time‐of‐flight photocurrent measurements in hydrogenated amorphous silicon. It is found that at room temperature the electron drift mobility and dispersion parameters decrease as annealing temperature is increased, but mobility activation energy remains unchanged by annealing treatments. These results can be explained by the broadening of exponential band tail due to the annealing process.
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