The Deposition by Aqueous Acetate Solution (DAAS) technique has been developed for the preparation of thin films of Pb(Zr0.53Ti0.47)O3[PZT(53,47)] perovskites. This process, which employs titanium acetate, tends to establish a chemically bound network in the pre-annealed phase and facilitates the crystallization of ferroelectric lead perovskites at a relatively low temperature. The addition of surface wetting reagents and oxidants and the action of ultrasonic waves were shown to affect the crystallinity and film quality of PZT(53, 47) perovskites on Pt<111>/Ti/SiO2/Si<100> substrates. The band structure analysis of the FTIR spectrum is illustrated to be a simple way of monitoring the crystallization of PZT(53, 47) perovskites. Physical and electrical characterization of the resultant thin films were performed. The advantages of the DAAS process for fabricating thin ferroelectric films are examined.