Deep level transient spectroscopy of InP quantum dots
作者:
S. Anand,
N. Carlsson,
M‐E Pistol,
L. Samuelson,
W. Seifert,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 20
页码: 3016-3018
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114937
出版商: AIP
数据来源: AIP
摘要:
We report on the application of deep level transient spectroscopy to the study of electron emission from quantum dots. The results are presented for coherently grown InP dots embedded in Ga0.5In0.5P. We determine an emission activation energy of 220 meV for the one electron ground state of the dots. With increased average electron occupation in the dots we observe a systematic shift of the DLTS peak towards lower temperatures. This we interpret as being due to Coulomb charging of the dots. We extract an average Coulomb charging energy of 8–12 meV per added electron in the dot in agreement with our estimated value of 9 meV. ©1995 American Institute of Physics.
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