High pressure dry oxidation kinetics of silicon—evidence of a highly stressed SiO2structure
作者:
C. Camelin,
G. Demazeau,
A. Straboni,
J. L. Buevoz,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 18
页码: 1211-1213
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96984
出版商: AIP
数据来源: AIP
摘要:
The kinetics of monocrystalline silicon oxidation using dry oxygen have been investigated over a wide range of pressure (14<P<1000 bars) within a low‐temperature domain (600<T<780 °C). In this unexplored domain, the linear and parabolic rate constants are dependent on the pressure asB/A∼P0.7andB∼P. The activation energy ofB/A(1.70 eV) is lower than the experimental values observed in conventional thermal oxidation. Very high residual stress values have been found for these oxides together with high values of refractive index suggesting that the oxidation proceeded under compressive in‐grown stresses.
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