Study of surface states in (110)n‐GaAs by exoelectron emission measurements
作者:
T. A. Railkar,
R. S. Bhide,
S. V. Bhoraskar,
V. Manorama,
V. J. Rao,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 155-157
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352150
出版商: AIP
数据来源: AIP
摘要:
Native surface defects on gallium arsenide are detected by thermally stimulated exoelectron emission measurements. Two emission peaks were identified that were correlated to the AsGaantisite defect. Plasma polymerized polythiophene grown on cleaned gallium arsenide is shown to improve the photoluminescence intensity of gallium arsenide and consequently the exoelectron emission measurements indicated the disappearance of one of the peaks. The results thus confirm the passivation of one of the AsGaantisite defects. The effects are also discussed in view of the low angle x‐ray diffraction spectrum for cleaned and polythiophene treated gallium arsenide. Growth of species involving gallium sulfur and arsenic sulfur were also detected.
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