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Surface kinetic considerations for molecular‐beam epitaxy growth of high‐quality inverted heterointerfaces

 

作者: P. G. Newman,   N. M. Cho,   D. J. Kim,   A. Madhukar,   D. D. Smith,   T. R. Aucoin,   G. J. Iafrate,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1483-1486

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584201

 

出版商: American Vacuum Society

 

关键词: HETEROJUNCTIONS;INTERFACE STRUCTURE;RHEED;CARRIER DENSITY;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;TRANSISTORS;ELECTRON MOBILITY;SURFACE STRUCTURE;OPTIMIZATION;DESIGN;CARRIER MOBILITY;KINETICS;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

Realization of high‐quality inverted interfaces has been thwarted by mutually competing surface kinetic requirements. We report a way out of this dilemma based upon reflection high‐energy diffraction (RHEED) studies of GaAs/AlxGa1−xAs(100) system. Liquid nitrogen mobilities comparable to good GaAs/Al0.3Ga0.7As normal heterojunctions at carrier concentrations ∼5×1011/cm2have been realized in inverted heterojunctions grown on the basis of RHEED suggested conditions and procedures.

 

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