Crystallographic orientation control of silicon stripes in SiO2grooves using a new double laser annealing technique
作者:
Koji Egami,
Masakazu Kimura,
Tsuneo Hamaguchi,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 10
页码: 962-964
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94611
出版商: AIP
数据来源: AIP
摘要:
Crystallographic orientation control using a new double laser annealing of silicon stripes in SiO2grooves is presented. In the laser recrystallization of silicon stripes in the structure consisting of SiO2grooves/polysilicon sublayer/quartz glass substrates, first, a part of the Si stripe is intentionally recrystallized by a cw Nd:yttrium aluminum garnet laser to obtain 〈100〉 texture with a small grain size. Next, using these 〈100〉 oriented Si grains as seed crystals, 〈100〉 oriented large Si stripes are obtained by scanning a cw Ar ion laser along the stripe direction. This double laser annealing technique for orientation control can potentially be used to fabricate three‐dimensional devices.
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