首页   按字顺浏览 期刊浏览 卷期浏览 Epitaxy of orthorhombic gadolinium disilicide on ⟨100⟩ silicon
Epitaxy of orthorhombic gadolinium disilicide on ⟨100⟩ silicon

 

作者: I. Gero¨cs,   G. Molna´r,   E. Ja´roli,   E. Zsoldos,   G. Peto¨,   J. Gyulai,   E. Bugiel,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 25  

页码: 2144-2145

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98974

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial orthorhombic GdSi2was grown byinsituvacuum annealing of a 50‐nm Gd layer on ⟨100⟩ silicon. The epitaxy was proved by x‐ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2and ⟨100⟩ silicon substrate was found to be 4%.

 

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