Preparation of nonequilibrium solid solutions of (GaAs)1−xSix
作者:
A. J. Noreika,
M. H. Francombe,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 8
页码: 3690-3691
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663840
出版商: AIP
数据来源: AIP
摘要:
A method using coincident rf sputtering and rf discharge decomposition is shown capable of producing single‐crystal, epitaxial, nonequilibrium solid solutions of Si in GaAs with the composition of Si far exceeding the limits reported for the bulk equilibrium phase diagram. Measured values of alloy composition and lattice parameter indicate close correspondence to Vegard's law. High‐temperature annealing of epitaxial films demonstrates the ultimate instability of the alloys.
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