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The decomposition of triethylgallium on Si(100)

 

作者: R. Lin,   T. R. Gow,   A. L. Backman,   L. A. Cadwell,   F. Lee,   R. I. Masel,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 725-728

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584633

 

出版商: American Vacuum Society

 

关键词: ETHYL COMPOUNDS;GALLIUM COMPOUNDS;DECOMPOSITION;SILICON;SUBSTRATES;SURFACE REACTIONS;PHOTOELECTRON SPECTROSCOPY;CHEMISORPTION;CHEMICAL REACTION YIELD;ETHYLENE;HYDROGEN;DESORPTION;HIGH TEMPERATURE;TEMPERATURE DEPENDENCE;CHEMICAL REACTION KINETICS;Si

 

数据来源: AIP

 

摘要:

The decomposition of triethylgallium (TEG) on Si(100) is studied using temperature programmed desorption, x‐ray photoelectron spectroscopy, and electron energy‐loss spectroscopy. It is found that TEG adsorbs molecularly. It then decomposes mainly by a simple β‐hydrogen elimination mechanism yielding ethylene and adsorbed hydrogen. The ethylene desorbs in a peak centered at 600 K while the hydrogen desorbs in a sharper peak at 820 K. There is some carbon incorporation which is attributed to adsorption of an ethylene impurity. However, there is no evidence for carbon deposition during the TEG decomposition process itself.

 

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