Analysis of cut‐off frequency roll‐off at high currents in SiGe double‐heterojunction bipolar transistors
作者:
Guang‐bo Gao,
Zhi‐fang Fan,
H. Morkoc¸,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 25
页码: 2951-2953
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104732
出版商: AIP
数据来源: AIP
摘要:
Roll‐off of the current gain cut‐off frequency inNpNdouble‐heterojunction bipolar transistors for large collector currents has been analyzed. The analysis includes such effects as the electron barrier formed at the collector base junction due to electron accumulation. Included in this investigation is also lateral electron diffusion before injection into the collector space‐charge region at the base‐collector heterointerface once the barrier is formed. The available data obtained in SiGe heterojunction bipolar transistors are in good agreement with this model.
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