The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5epitaxial layers have been measured using a polarization‐modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x‐ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical‐vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1‐xGaxAsy/InP and InP/In1‐xGaxAsyP1‐y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5where the interface region is estimated to be (10±10) A˚ thick. The importance of performinginsituSE measurements is emphasized.