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Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

 

作者: J. W. Lee,   C. B. Vartuli,   C. R. Abernathy,   J. D. MacKenzie,   J. R. Mileham,   S. J. Pearton,   R. J. Shul,   J. C. Zolper,   M. Hagerott‐Crawford,   J. M. Zavada,   R. G. Wilson,   R. N. Schwartz,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 6  

页码: 3637-3640

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588740

 

出版商: American Vacuum Society

 

关键词: SEMICONDUCTOR LASERS;ALUMINIUM NITRIDES;GALLIUM NITRIDES;INDIUM NITRIDES;FABRICATION;ETCHING;HIGH−FREQUENCY DISCHARGES;ACTIVATION ENERGY;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 0273−0400 K;GaN;(In,Ga)N

 

数据来源: AIP

 

摘要:

Several new wet and dry etch processes required for fabrication of microdisk lasers in the III nitrides have been developed. ICl/Ar electron cyclotron resonance plasmas produce etch rates of 1.3 μm/min for GaN and 1.15 μm/min for InN at 1000 W microwave power and 250 W of rf power. These rates are substantially faster than previously investigated Cl2/Ar or CH4/H2plasma chemistries. Selectivities of 5–6 over AlN are obtained for these materials. Wet chemical etching of AlN and InXAl1−XN in KOH‐based solutions was found to be a strong function of etch temperature and material quality. The activation energy for these materials was in the range 2–6 kcal/mol, typical of diffusion‐controlled processes. The KOH solutions did not etch GaN or InN at temperature as high as 80 °C.

 

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