Strained‐layer GaAs photocathodes are used at Jefferson Lab to obtain highly polarized electrons. Exposure to atomic hydrogen (or deuterium) is used to clean the wafer surface before the activation with cesium and nitrogen trifluoride to consistently produce high quantum yield photocathodes. The hydrogen‐cleaning method is easy, reliable and inexpensive. However, recent tests indicate that exposure to atomic hydrogen may affect the polarization of the electron beam. This paper presents preliminary results of a series of tests conducted to study the effect of atomic H exposure on the polarized electron beam from a strained‐layer GaAs sample. The experimental setup is described and the first measurements of the beam polarization as a function of exposure dose to atomic hydrogen are presented. © 2003 American Institute of Physics