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Etching of indium tin oxide in methane/hydrogen plasmas

 

作者: I. Adesida,   D. G. Ballegeer,   J. W. Seo,   A. Ketterson,   H. Chang,   K. Y. Cheng,   T. Gessert,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3551-3554

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585843

 

出版商: American Vacuum Society

 

关键词: ETCHING;INDIUM OXIDES;TIN OXIDES;METHANE;HYDROGEN;PLASMA;GRATINGS;PHOTODETECTORS;MSM JUNCTIONS;GALLIUM ARSENIDES;FABRICATION;TERNARY COMPOUNDS;In2O3:SnO2;GaAs

 

数据来源: AIP

 

摘要:

The reactive ion etching of the transparent conductor, indium tin oxide (ITO), in methane/hydrogen plasmas has been characterized. It is shown that ITO can be selectively etched on GaAs and AlGaAs. Anisotropic structures and gratings with submicrometer dimensions in ITO are presented. Application of the etching process to the fabrication of highly sensitive metal–semiconductor–metal (MSM) photodetectors with interdigitated ITO fingers is demonstrated.

 

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