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Surface dielectric anisotropies and phase diagrams of (001) GaAs

 

作者: D. E. Aspnes,   L. T. Florez,   A. A. Studna,   J. P. Harbison,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 4  

页码: 936-939

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584946

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;PHASE DIAGRAMS;ANISOTROPY;DIELECTRIC PROPERTIES;REFLECTION SPECTROSCOPY;MOLECULAR BEAM EPITAXY;DESORPTION;TEMPERATURE EFFECTS;GaAs

 

数据来源: AIP

 

摘要:

Using the double‐modulation extension of reflectance‐difference spectroscopy, we obtain surface dielectric anisotropy spectra under steady‐state conditions for several reconstructions encountered in molecular beam epitaxy on (001) GaAs and follow their evolution with temperature. The changes observed with temperature are gradual, generally not exhibiting distinct boundaries. Marked changes in anisotropy are observed during thermal desorption of the native oxide, indicating that the process is not simple but involves surface roughening.

 

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