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An Improved Method of Growing CdS Crystals from the Vapor Phase

 

作者: P. D. Fochs,  

 

期刊: Journal of Applied Physics  （AIP Available online 1960）
卷期: Volume 31, issue 10  

页码: 1733-1734

 

ISSN:0021-8979

 

年代: 1960

 

DOI:10.1063/1.1735436

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The gradual increase in the difference in temperatures of two Kanthal heating elements enables CdS crystals to be grown directly on the inside of a silica tube, remote from one another, instead of on a continuous polycrystalline CdS substrate as happens in most existing methods.

 

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