Two types of GaAs/AIGaAs laser arrays, each consisting of five emitters and suitable for high power operations, have been fabricated and tested. They are easily fabricated, have high yield and deliver high power. The first array structure was fabricated using proton implantation to define the active lasing channels. Damage introduced by proton bombardment provides both electrical and optical confinement for the lasing channels. We have investigated the effect of heat treatment on the performance of these lasers and have found that the heat treated samples had a lower threshold current and higher quantum efficiency. For 400μm long devices, with uncoated facets, we have measured a threshold current of 200 mA and a peak power of 231 mW/facet. The highest external quantum efficiency is 60%. We have also fabricated laser arrays with a simple, self‐aligned, index guided ridge waveguide structures. We have obtain a pulsed output power of up to 551 mW/facet with a quantum efficiency of 37.4%. The typical threshold current is 370 mA.