Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.
作者:
Yoshihiro Hishikawa,
Sadaji Tsuge,
Noboru Nakamura,
Shinya Tsuda,
Shoichi Nakano,
Yukinori Kuwano,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 1
页码: 508-510
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.347694
出版商: AIP
数据来源: AIP
摘要:
Hydrogenated amorphous silicon (a‐Si:H) films have been fabricated by a plasma chemical vapor deposition (plasma‐CVD) method at low substrate temperatures (Ts: 80 or 50 °C) to obtain wide‐gap films. Device‐quality wide‐gap films (photoconductivity under AM‐1.5, 100 mW/cm2illumination ∼10−5&OHgr;−1 cm−1, ratio of photoconductivity and dark conductivity ∼106, and Tanc’s gap ∼2 eV) are obtained at lowTs, by optimizing the plasma parameters or by diluting the material gas (SiH4) with H2. Experimental results suggest that lowering the deposition rate ofa‐Si:H films is an important factor in obtaining high‐quality films at lowTsusing a plasma‐CVD method.
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