Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices
作者:
J. W. Tomm,
R. Mu¨ller,
A. Ba¨rwolff,
T. Elsaesser,
D. Lorenzen,
F. X. Daiminger,
A. Gerhardt,
J. Donecker,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 26
页码: 3908-3910
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122932
出版商: AIP
数据来源: AIP
摘要:
Thermally induced strain caused by device packaging is studied in high-power semiconductor lasers by a noninvasive technique. Fourier-transform photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of quantum-confined optical transitions in the optical active region. These shifts by up to 7 meV serve as a measure for strain and are compared with model calculations. For a given packaging architecture, about one quarter of the mounting-induced strain is transferred to the quantum-well region of the device. Spatially resolved measurements demonstrate a lateral strain gradient in the devices. ©1998 American Institute of Physics.
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