The dependence of RHEED oscillations on MBE growth parameters
作者:
J. M. Van Hove,
P. R. Pukite,
P. I. Cohen,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 2
页码: 563-567
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.583180
出版商: American Vacuum Society
关键词: MOLECULAR BEAM EPITAXY;ELECTRON DIFFRACTION;BEAM PROFILES;OSCILLATIONS;GALLIUM ARSENIDES;KINETICS;CRYSTAL GROWTH;COATINGS;ORIENTATION;SURFACE STRUCTURE
数据来源: AIP
摘要:
Oscillations in both the intensity and width of reflection high‐energy electron diffraction beams that are measured during the MBE growth of GaAs are observed to depend upon most growth parameters. The envelope of the intensity oscillations, for example, depends upon the flux ratios, the substrate temperature, the sample misorientation, the scattering geometry, the sample flatness, and the flux uniformity. To separate these dependencies we have made RHEED measurements on small, exceedingly flat, near singular samples. The angular profiles of the specular beam were measured during the first two periods of oscillations. These data were analyzed in terms of the two‐level diffraction calculation of Lent and Cohen. The measured profiles are in excellent agreement with that calculation. For oscillations with a 26‐s period, moderate changes in the substrate temperature and As flux can cause significant changes in the pair correlation length on the surface.
点击下载:
PDF
(478KB)
返 回