Noninvasive infrared‐based measurement of the temperature of GaAs semiconductor crystals

 

作者: S. C. Malam,   T. Pell,   R. M. Nix,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 2938-2939

 

ISSN:0734-2101

 

年代: 1994

 

DOI:10.1116/1.578971

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;SUBSTRATES;TEMPERATURE MEASUREMENT;ABSORPTION SPECTRA;INFRARED RADIATION;CALIBRATION;TEMPERATURE RANGE 273−400 K;TEMPERATURE RANGE 0400−1000 K;GaAs

 

数据来源: AIP

 

摘要:

 

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