Ballistic‐electron emission microscopy on the Au/n‐Si(111)7×7 interface
作者:
M. T. Cuberes,
A. Bauer,
H. J. Wen,
D. Vandré,
M. Prietsch,
G. Kaindl,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2422-2428
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587775
出版商: American Vacuum Society
关键词: GOLD;SILICON;N−TYPE CONDUCTORS;METAL−SEMICONDUCTOR CONTACTS;INTERFACE STRUCTURE;STM;INELASTIC SCATTERING;IONIZATION;MICROSCOPY;ELECTRON EMISSION;Au;Si
数据来源: AIP
摘要:
Ballistic‐electron emission microscopy (BEEM), performed under ultrahigh vacuum conditions at the room‐temperature‐grown Au/n‐Si(111)7×7 interface, allows a measurement of the BEEM current for tip biases up to ≊ 8 V without a noticeable change in ballistic transmissivity. The differences of the present results to previous reports, where either no BEEM current was observed or the transmissivity was modified when applying high tip voltages, can be explained by the absence of intermixing at the Au/Si interface. Scanning tunneling microscope images of ≊40‐Å‐thick Au films reveal a characteristic topography of the metal surface with ≊2.5 Å high circular terraces stacked in up to four stages.
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