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Energy loss of 1000 keV electrons in thin silicon crystals as measured by high voltage electron microscopy

 

作者: Kenji Doi,   Kazuhiko Izui,   Hitoshi Ohtsu,   Hiroshi Tomimitsu,  

 

期刊: Radiation Effects  （Taylor Available online 1975）
卷期: Volume 26, issue 3  

页码: 129-133

 

ISSN:0033-7579

 

年代: 1975

 

DOI:10.1080/00337577508234741

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Energy loss spectra of 1000 keV electrons transmitted by [111]-: riented thin silicon crystals were observed by an energy analyzer attached to the HVEM. The crystals were set to the systematic 220 Bragg reflection. Measurements were made for crystal thickness ranging from 1000 to 10,000 Å, which were determined by observations of pendellösung fringes.

 

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