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Etch products from the reaction on Cl2with Al(100) and Cu(100) and XeF2with W(111) and Nb

 

作者: Harold F. Winters,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 1  

页码: 9-15

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583301

 

出版商: American Vacuum Society

 

关键词: ETCHING;ALUMINIUM;COPPER;TUNGSTEN;ION COLLISIONS;NIOBIUM;CHLORINE MOLECULES;XENON FLUORIDES;PLASMA JETS;CHEMISORPTION;Cl2;XeF2

 

数据来源: AIP

 

摘要:

A modulated‐beam, mass spectrometer system has been used to obtain information about etch products, reaction probabilities, and etching mechanisms for the reactions of Cl2with Al(100) and Cu(100) and for the reaction of XeF2with W(111) and Nb. The influence of ion bombardment on the etching reaction has also been investigated.

 

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