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Electron instabilities due to dislocation dangling bonds in silicon crystals

 

作者: V.A. Grazhulis,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 151-154

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908212990

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Recombination instability (RI) in dislocated silicon crystals is briefly considered. Other most possible electron instabilities (EI) due to dislocation dangling bonds (DDB) are also mentioned.

 

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