Deep levels in GaAs grown on Si during rapid thermal annealing
作者:
Hoon Young Cho,
Eun Kyu Kim,
Yong Kim,
Suk‐Ki Min,
Ju Hoon Yoon,
Sung Ho Choh,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 8
页码: 761-763
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102705
出版商: AIP
数据来源: AIP
摘要:
Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For GaAs layers on Si after annealing at 850 °C for 20 s, three electron deep levels at 0.36, 0.27, and 0.20 eV below the conduction band were created as the dominant deep levels. Especially, the 0.36 eV level was found to increase up to 40% of the donor concentration as the thickness of Si substrates increased. These results indicate that rapid thermal annealing of GaAs on Si may induce high‐density deep levels due to a biaxial tensile stress caused by the difference in thermal expansion coefficients.
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