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Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy

 

作者: Young G. Chai,   Robert Chow,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 10  

页码: 796-798

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92167

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A method to eliminate oval defects from GaAs films grown by molecular beam epitaxy is presented. It appears that gallium oxide in the Ga melt is the major cause for this surface defect. A simple precaution of suppressing oxidation of gallium virtually eliminated oval defects.

 

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