Electron emission rates and capture cross sections at the gold acceptor level have been obtained in siliconp+/ndiodes with phosphorus concentrations of 1.2×1012cm−3and 5×1014cm−3, showing no phosphorus concentration dependencies. This indicates negligible electric field dependence of the electron emission rate in the range 102–105V/cm and supports the contention that the capture cross section is independent of the phosphorus dopant impurity concentration. The magnitude of the capture cross‐section data supports a neutral potential model of the gold acceptor center.