Mechanical stress in plasma-exposed Si–SiO2structures
作者:
K. Christova,
A. Szekeres,
S. Alexandrova,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1991)
卷期:
Volume 63,
issue 1
页码: 15-17
ISSN:0950-0839
年代: 1991
DOI:10.1080/09500839108206595
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The mechanical stress in thermal SiO2–Si structures exposed to a radiofrequency hydrogen plasma has been investigated. It was found that the compressive oxide stress is released and a small tensile stress appears, which is consistent with a previously observed annealing of a built-in oxide charge. This result applies for oxides with a thickness of about 40nm and above and an oxidation temperature in the range of 850 to 1050°C
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