We demonstrate that a quasi‐one‐dimensional quantum wire can, in principle, be produced at the crossing point of heterointerfaces. We show that the intersection of two accumulation layers, which are formed along separate heterointerfaces, realizes an ‘‘accumulation wire.’’ Our theoretical analysis yields potential distributions which possess confined electronic states in the vicinity of the point of intersection. In our design, confinement in the quantum wire is solely provided by the inherent electric fields associated with heterointerfaces without the need for additional lithography. In other words, our proposal of the quantum wire compares to previous designs in the same manner in which a quasi‐two‐dimensional (2D) system in an accumulation (or inversion) layer compares to a quasi‐2D system in a quantum well.