By employing an electron cyclotron resonance plasma‐enhanced chemical vapor deposition technique, we report the successful growth of cubic boron nitride films on single‐crystal (100) silicon wafer without external rf or dc substrate biasing. Ammonia and boron trifluoride gases were used for the deposition of cubic boron nitride. The substrate temperature during deposition was about 675 °C. The films were characterized by infrared spectroscopy and ellipsometry. The existence of cubic boron nitride was identified by the characteristic boron nitride infrared signal at 1110 cm−1. The film thickness was about 1000 A˚, with a growth rate of 100 A˚/min.