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Quantum efficiencies of thin‐film IV‐VI semiconductor photodiodes

 

作者: H. Holloway,  

 

期刊: Journal of Applied Physics  （AIP Available online 1979）
卷期: Volume 50, issue 3  

页码: 1386-1398

 

ISSN:0021-8979

 

年代: 1979

 

DOI:10.1063/1.326120

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An analysis is given of the reflection‐loss‐limited quantum efficiency of thin‐film IV‐VI semiconductor photodiodes. The results are applied to deduction of the optimum structures for ir detector applications and are illustrated by calculations for PbTe and Pb0.8Sn0.2Te.

 

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