Intrinsic carrier concentrations in Hg1−xCdxTe with the use of Fermi–Dirac statistics
作者:
Frank L. Madarasz,
Frank Szmulowicz,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 7
页码: 2770-2772
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335868
出版商: AIP
数据来源: AIP
摘要:
The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited tox≥0.20 and is not appropriate for the narrow band gapx<0.20 compositions. Our present treatment improves on existing calculations by using composition and temperature dependent momentum matrix element squared, which is the input to the Kane’sk ⋅ ptheory, and by making no approximations to the band structure beyond those inherent to Kane’s theory. We find that our results forx≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.
点击下载:
PDF
(167KB)
返 回