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Intrinsic carrier concentrations in Hg1−xCdxTe with the use of Fermi–Dirac statistics

 

作者: Frank L. Madarasz,   Frank Szmulowicz,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 58, issue 7  

页码: 2770-2772

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335868

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited tox≥0.20 and is not appropriate for the narrow band gapx<0.20 compositions. Our present treatment improves on existing calculations by using composition and temperature dependent momentum matrix element squared, which is the input to the Kane’sk ⋅ ptheory, and by making no approximations to the band structure beyond those inherent to Kane’s theory. We find that our results forx≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.

 

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