Resistless microfabrication of the metallization ofn‐type GaAs formed by projection‐patterned doping using a KrF excimer laser is described. Silane (SiH4) gas is used as a source material of then‐type dopant of Si. Copper thin films with a linewidth as narrow as 3.4 &mgr;m are deposited selectively on the doped region by electroplating using a CuSO4aqueous solution. Using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32×10−5&OHgr; cm2, which is one‐thirtieth of that of the conventional alloyed contacts.