Temperature dependence, in the range 150–450 K, of the resistivity and Hall mobility were studied on polycrystalline sputtered CdS thin films. The room‐temperature values of analyzed samples for resistivities and Hall mobilities ranged between 1–108Ω cm and 2–8 cm2/V s. The results showed a major scattering mechanism controlled by the intergrain barrier height, the carriers being thermally activated. A temperature dependence of the barrier height φB=φ0(1+αT) has been observed which allows fitting a general expression for Hall mobility of the form μH=11.6 exp(26.8 φ0) exp(−φ0/kT). A theoretical calculation of the μ0parameter has been performed. The results show good agreement with the experimental data.