SBTN thin film capacitors prepared by RF-magnetron sputtering
作者:
Shan Sun,
GlenR. Fox,
T.Domokos Hadnagy,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 31-37
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215607
出版商: Taylor & Francis Group
关键词: SBT;SBTN;ferroelectric thin films;sputter;crystallographic orientation
数据来源: Taylor
摘要:
Thin films of Bi based layered-structure solid solution, SrBi2Ta2O9-SrBi2Nb2O9(SBTN), were prepared by conventional single target RF-magnetron sputtering on Pt/Ti/SiO2/Si substrates with a diameter of 6 inches. The capacitors were fabricated by patterning the top Pt electrode using photolithography. SBTN thin films with random and c-axis preferred orientation were obtained using RTP annealing and conventional furnace annealing, respectively. The electrical properties were characterized by both the hysteresis and pulsed field methods. A 2Pr of 24 μC/cm2and Ecof 125kV/cm were measured from randomly oriented 1600Å films. The films exhibit excellent fatigue performance.
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