Step bunching and step equalization on vicinal GaAs(001) surfaces
作者:
K. Pond,
A. Lorke,
J. Ibbetson,
V. Bressler‐Hill,
R. Maboudian,
W. H. Weinberg,
A. C. Gossard,
P. M. Petroff,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2689-2693
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587232
出版商: American Vacuum Society
关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;SURFACE STRUCTURE;STM;SUPERLATTICES;MONOLAYERS;ADATOMS;STATISTICS;GaAs;AlAs
数据来源: AIP
摘要:
Terrace width distributions have been calculated from scanning tunneling microscopy (STM) images of molecular‐beam epitaxy (MBE)‐grown GaAs(001) surfaces misoriented by both 1° and 2° towards the (111)A direction. This analysis reveals a peak in the terrace width distribution at approximately 40–50 Å, regardless of the original miscut, with larger terraces forming in order to preserve the angle of vicinality. Growth of a tilted superlattice (TSL) improves the periodicity of the surface. A statistical analysis of the STM image of a 1° TSL capped with three monolayers of GaAs reveals a bell‐shaped distribution of terrace widths with a peak at the average terrace width. These results suggest that MBE growth of vicinal GaAs(001) does not result in equalized steps but that the growth of a TSL does tend towards step equalization. The differences between these two growth regimes are discussed.
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