Improvement on the current‐voltage characteristics of polycrystalline silicon contactedn+‐pjunctions after they were applied a high‐field scanned stressing is reported. For the stressed diodes, the leakage current decreased as much as two orders, the breakdown voltage shifted from −45 to −60 V, and the forward ideality factor also decreased. Scanning electron microscopy photographs on the cross‐sectional view of the junctions revealed that local melting might have occurred during stressing to cause the improvement.