Amorphous silicon technology offers an avenue for low‐coast, thin‐film photovoltaic applications. The performance of amorphous silicon‐based solar cells is limited by light‐induced degradation. The inadequate existing understanding of the electronic phenomena in amorphous silicon materials and devices hampers resolution of this problem. We are posing questions that should stimulate researchers to develop better descriptions for device performance and better microscopic models for defect sites. The issue of Staebler‐Wronski degradation should not be addressed separately from initial performance, but research should focus on material and device properties in the stabilized state. The main focus of the a‐Si:H research sponsored by the United States Department of Energy will be on improving the stabilized performance, which we anticipate to accomplish through focused development of optimized multijunction device structures combined with an improved understanding of materials.