We have studied the defect engineering in metalorganic vapor phase epitaxy InxGa1−xAs by controlled oxygen doping. Diethylaluminum ethoxide (DEALO) was used as an oxygen precursor to provide the intentional deep level incorporation. DEALO doping in InxGa1−xAs:Si withx≤0.25 resulted in the reduction in carrier concentrations. The Al and O incorporation with a DEALO mole fraction was weakly dependent on alloy composition forx≤0.25. The degree of electrical compensation, however, decreased as the In content increased at the same oxygen content. Deep level transient spectroscopy investigations on a series of InxGa1−xAs:Si:O samples withxranging from 0 to 0.18 reveal a set of oxygen‐derived deep levels, similar to those found in DEALO‐doped GaAs. These characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band, as compared to the rapid decrease in the conduction band of InxGa1−xAs withx. ©1995 American Institute of Physics.