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Current‐voltage characteristics of ideal silicon diodes in the range 300–400 K

 

作者: P. Cappelletti,   G. F. Cerofolini,   M. L. Polignano,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 57, issue 2  

页码: 646-647

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334758

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Current‐voltage characteristics of silicon diodes which were found to be ideal at room temperature have been investigated in the range 300–400 K. The diodes remain ideal at higher temperatures, too.

 

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